Part Number Hot Search : 
AT17C128 1N6042E3 BAS16W STR750F NAS7820 54ACS F60B1 CY28323
Product Description
Full Text Search
 

To Download JAN1N5415 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  t4 - lds - 0231, rev . 1 (111902) ?2011 microsemi corporation page 1 of 5 1n5415 thru 1n5420 available on commercial versions voidless hermetically sealed fast recovery glass rectifiers qualified per mil - prf - 19500/411 qualified levels : jan, jantx, jantxv and jans descri ption this ?fast recovery? rectifier diode series is military qualified and is ideal for high - reliability applications where a failure cannot be tolerated. these industry - recognized 3.0 a mp rated rectifiers for working peak reverse voltages from 50 to 6 00 volts are hermetically sealed with voidless - glass construction using an internal ? category 1 ? metallurgical bond. these devices are also available in surface mount melf package configurations. microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through - hole and surface mount packages. ? b ? package also available in : ?b ? sq - melf ( d - 5b ) package ( surface mount ) 1n5415 us ? 1n5420 us important: for the latest information, visit our website http://www.microsemi.com . features ? popular jedec regis tered 1n5 415 thru 1n5 420 series . ? voidless hermetically sealed glass package . ? quadruple - l ayer p assivation . ? internal ? category 1 ? m etallurgical bonds . ? working peak reverse voltage 50 to 600 v olts. ? jan, jantx, jantxv and jans qualification s available per mil - prf - 19500/4 11. ? rohs compliant versions available (commercial grade only) . applications / benefits ? fast recovery 3 a mp 50 to 600 volt rectifiers. ? military and other high - reliability applications. ? general rectifier applications including bridges, half - br idges, catch diodes, etc. ? high forward surge current capability. ? extremely robust construction. ? low thermal resistance. ? controlled avalanche with peak reverse power capability. ? inherently radiation hard as described in microsemi ? micronote 050 ? . m axim um ratings msc ? law rence 6 lake street, lawrence, ma 01841 tel: 1 - 800- 446- 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +175 o c thermal resistance junction - to - lead ( 1 ) r ? jl 2 2 o c /w forward surge current @ 8.3 ms half - sine i fsm 80 a average rectified forward current ( 4 ) @ t a = + 55 o c @ t a = + 100 o c i o (2 , 3 ) i o (3) 3 2 a working peak reverse voltage 1n5415 1n5416 1n5417 1n5418 1n5419 1n5420 v rw m 50 100 200 400 500 600 v maximum reverse recovery time (5) 1n5415 1n541 6 1n5417 1n5418 1n5419 1n5420 t rr 150 150 150 150 250 400 ns solder temperature @ 10 s t sp 260 o c see notes on next page.
t4 - lds - 0231, rev . 1 (111902) ?2011 microsemi corporation page 2 of 5 1n5415 thru 1n5420 m axim um ratings notes : 1. a t 3/8 inch (10 mm) lead length from body . 2. d erate linearly at 22 ma/ o c for 55 o c < t a < 100 o c. 3. above t a = 100 o c, derate linearly at 26.7 ma / o c to zero at t a = 175 o c. 4. these ambient ratings are for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled wh ere t j( max) does not exceed 175 o c . 5. i f = 0.5 a, i rm = 1 a, i r(rec) = 0.250 a . mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs. ? termina ls : axial - leads are t in/ l ead (sn/pb) over c opper. rohs compliant matte - ti n is available for commercial grade only. ? marking: body paint and part number . ? polarity: cathode band. ? tape & reel option: standard per eia - 296. contact factory for quantities. ? weight: 750 m illigrams . ? see p ackage d imensions on last page. pa rt nomenclature jan 1n5415 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv leve l jans = jans level blank = c ommercial jedec type number see electrical characteristic s t able r ohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v rw m wo rking peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref jesd282 - b). i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified current. i r maximum reverse current: the maximum reverse (leakage) current that will flow at t he specified voltage and temperature. t rr reverse recovery time: the time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse curr ent occurs.
t4 - lds - 0231, rev . 1 (111902) ?2011 microsemi corporation page 3 of 5 1n5415 thru 1n5420 electrical characteristics type minimum breakdown voltage v br @ 50 a volts forward voltage v f @ 9 a maximum reverse current i r @ v rwm cap acit ance c v r @ 4 v pf min. volts max . volts 25 o c a 100 o c a 1n5415 1n5416 1n5 417 1n5418 1n5419 1n5420 55 110 220 440 550 660 0.6 0.6 0.6 0.6 0.6 0.6 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 20 20 20 20 20 20 550 430 250 165 140 120 note 1: i f = 0.5 a, i rm = 1 a, i r(rec) = 0.250 a.
t4 - lds - 0231, rev . 1 (111902) ?2011 microsemi corporation page 4 of 5 1n5415 thru 1n5420 graphs % piv t h heating time (seconds) figure 1 figure 2 typical reverse current vs. piv maximum thermal impedance v f ? v oltage (v) figure 3 typical forward current vs. forward voltage i f ? c urrent ( a ) i f ? c urrent ( a ) z ?jx ( o c /watt)
t4 - lds - 0231, rev . 1 (111902) ?2011 microsemi corporation page 5 of 5 1n5415 thru 1n5420 package dimensions s y mbol d imensions n o t e s inch m illimeters m i n m a x m i n m a x bd 0 .110 0 .180 2.79 4.57 3 ld 0 .036 0 .042 0.91 1.07 4 bl 0 .130 0 .260 3.30 6.60 4 ll 0 .90 1.30 22.9 33.0 no t es: 1 . d imension s ar e i n inches. 2 . m illimete r equi v alent s ar e gi v e n fo r genera l informatio n onl y . 3 . d imensio n b d shal l b e mea s ure d a t th e larges t diameter. 4 . t h e b l dimensio n shal l includ e th e entir e body includin g slug s and section s o f th e lea d o v er w hic h th e diamete r i s uncontrolled . t hi s unc ontrolle d are a i s define d a s th e z one bet w een the edg e o f th e diod e body a n d e x tendin g .05 0 inc h (1.2 7 mm ) ont o th e leads. 5 . i n accordanc e w it h asm e y 14.5 m , diameter s ar e equi v alen t t o x s y mbolog y .


▲Up To Search▲   

 
Price & Availability of JAN1N5415

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X